Mask and method for forming dynamic random access memory (DRAM) contacts
US6417091B2 · kind B2 · utility
0Cited by
3References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 4, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask (10) includes a pattern (14) having a plurality of substantially rectangular shapes (20) arranged longitudinally in each of a plurality of substantially parallel rows (22). The rows (22) are evenly spaced apart from each other. The substantially rectangular shapes (20) in each row (22) are evenly spaced apart from each other and offset from the substantially rectangular shapes (20) in neighboring rows (22). The substantially rectangular shapes (20) define a plurality of T-shapes (24) connected to and offset from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.