Method for manufacturing a functional device by forming 45-degree-surface on (100) silicon
US6417107B1 · kind B1 · utility
20Cited by
3References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jun 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Conventional methods of forming a (111)-plane into a 45-degree-surface have employed a silicon wafer which requires a high processing cost, and methods utilizing an inexpensive (100) silicon wafer have not been successful in forming a 45-degree-surface having sufficient flatness. There is provided a method for manufacturing a semiconductor device preparing a substrate made of the (100) silicon wafer including steps of preparing a substrate made of the (100) silicon wafer, forming a pattern along a <100> direction of the (100) silicon, and etching with an anisotropic etchant using the pattern while applying an ultrasonic wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.