High speed semiconductor photodetector
US6417528B1 · kind B1 · utility
5Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 28, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
Abstract
The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.