Non-volatile semiconductor memory device and method for manufacturing the same
US6417540B1 · kind B1 · utility
3Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jul 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
The present invention relates to a non-volatile semiconductor memory device, having the higher margin of the implanted ion passing through a source-to-drain electrode, as well as the excellent covering power of an embedded layer deposited in and above a groove within a field oxide region distributed at both the source-to-drain electrode and a source area.The present invention also provides a method for manufacturing the non-volatile semiconductor memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.