Semiconductor device
US6417560B1 · kind B1 · utility
2Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R19/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.