Semiconductor element with metal layer
US6417564B2 · kind B2 · utility
0Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor element which comprises a metal layer with gold and germanium. A thin covering layer of germanium oxide lies on the metal layer, protecting the subjacent metal layer from undesirable oxidation of the germanium. The invention also relates to a method of manufacturing such a semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.