Flat interface for a metal-silicon contract barrier film
US6417567B1 · kind B1 · utility
4Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1078
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive contact having an atomically flat interface. The contact includes, in order, a silicon substrate, a highly disordered silicide layer, and a titanium oxynitride layer. The silicide layer is formed of titanium, silicon, and one of the elements tungsten, tantalum, and molybdenum. The interface between the silicon substrate and the silicide layer is atomically flat. The flat interface prevents diffusion of conductive materials into the underlying silicon substrate. The contact is useful especially for very small devices and shallow junctions, such as are required for ULSI shallow junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.