Scanning depletion microscopy for carrier profiling
US6417673B1 · kind B1 · utility
3Cited by
18References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1998 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Nov 19, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an imaging system for carrier profiling of a device structure, a doped semiconductor tip is utilized as an active dynamic sensing element for successively probing spaced-apart portions of the structure. At each probe position, the bias voltage applied between the tip and the structure is varied. While the bias voltage is being varied, a measurement is taken of the change in capacitance that occurs between the tip and the structure. These measurements provide an accurate high-resolution high-contrast image that is representative of the carrier profile of the probed portions of the device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.