Dual, synthetic spin valve sensor using current pinning
US6418000B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 21, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dual symmetric spin valve sensor consists of outer ferromagnetic pinned layers which are pinned by a current induced magnetic field. One of the outer pinned layers is magnetically coupled to an inner pinned layer which is pinned so that the magnetization of the other outer and the inner pinned layers are in the same direction. This provides the magnetization for the free layer disposed between the two layers to properly use the spin valve effect. The ferromagnetic layers are separated by conductor layers. The pin layers are synthetic antiferromagnetic layers consisting of the two layers tightly interlayer exchange coupled. The field induced by the sense current pins the pinned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.