Nonvolatile semiconductor memory
US6418065B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jun 19, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor memory having an internal booster, such as a flash memory, in which a situation that the program cannot escape from a writing operation can be avoided, and the writing operation can be promptly finished according to the level of an external source voltage. This semiconductor memory having an internal booster has a voltage detecting circuit (limiter LM) for detecting whether a boosted voltage has reached a predetermined potential or not and a timer capable of counting predetermined time. A control circuit applies the boosted voltage to a selected memory cell when the voltage detecting circuit detects that the boosted voltage has reached the predetermined potential and, when it is detected on the basis of counting information of the timer that the predetermined time has elapsed since the booster started the boosting operation, the control circuit applies the boosted voltage to the selected memory cell even if the boosted voltage generated by the booster has not reached the predetermined potential yet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.