Method of forming oxidized film on SOI substrate
US6420281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2000 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Feb 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
One or more capacitors are formed using thermally oxidized films formed on a silicon layer of an SOI substrate. The capacitors may be formed alone or together with other semiconductor elements on a single SOI substrate. A diffuse layer having an impurity in a high density is first formed on the silicon layer, and then an oxidized film is formed on the diffused layer by thermal oxidation. Then, contaminants in the oxidized film are driven-out under a high temperature heat treatment, thereby to improve quality of the oxidized film, such as durability against a high voltage. Plural capacitors may be formed using oxidized films having a respectively different thickness, by repeating thermal oxidation and removal of the oxidized film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.