Infra-red detector
US6420707B1 · kind B1 · utility
2Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1999 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jul 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/282
Abstract
An infra-red detector (10) comprises a detector region (38) and a collector region separated by a barrier region. Operation of these regions is controlled by potentials applied to respective gate electrodes (30, 34, 32), insulated from the detector, barrier and collector regions by an insulating oxide layer (36). The detector, barrier, and collector regions may be arranged on a silicon substrate (24). In operation, photo-excited electrons are generated in the detector region and these cross the barrier region for readout from the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.