Light emitting diode of improved current blocking and light extraction structure

US6420732B1 · kind B1 · utility

Assignee

• LUXNET CORPORATION · TW

Inventors

• Hsing-Jien Kung · Chagrin Falls, US
• Mark DeVito · Vancouver, US
• Chin-Wang Tu · Cupertino, US

Key dates

• Filing date: Jun 26, 2000
• Grant date: Jul 16, 2002
• Expiry date: Jul 14, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer. The improved LED structures preferably include a higher resistive or reverse biased pattern, typically built on or within the substrate, approximately below the second electrode, to further assist …