Nitrogen doped carbon electrodes
US6423193B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC02F1/46109
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electrode (22) formed from a layer (24) of tetrahedral carbon doped with nitrogen (taC:N) has both electroanalytical and electrosynthetic applications. The electrode includes a substrate material (26), such as a silicon wafer, for supporting the taC:N layer. The electrode has good durability under a high anodic potential and high selectivity for conversion of chloride ions to chlorine, and for other electron transfer reactions. The electrode is readily formed at ambient temperatures by vacuum deposition of carbon and nitrogen ions on to the substrate. Masking of the substrate during deposition allows the formation of microelectrode arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.