Patent · US Expired

Method and apparatus for etching

US6423207B1 · kind B1 · utility

34Cited by
2References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 1, 2000
Grant dateJul 23, 2002
Priority date
Expiry dateSep 1, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K3/07
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A method of making, by etching, depressions in selected portions of an etching surface of an electrically conductive etching material, the depressions forming an etching pattern, comprises the step of contacting the etching material with an etchant. A passivating layer is formed on the etching material which layer decreases or stops the etching capability of the etchant on the surface and which is dissolved in a chemical reaction when exposed to electromagnetic radiation. An electrode with electrically conductive electrode portions in selected portions of an electrode surface is provided, the electrode portions forming an electrode pattern corresponding to the etching pattern. The electrode is arranged in contact with the etchant and with the electrode portions facing the etching surface of the etching material, an electric voltage is applied between the electrode and the etching material, and the etching material is exposed to electromagnetic radiation essentially perpendicular to the etching surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.