Method of fabricating a silicon solar cell
US6423568B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.