Process of making carrier substrate and semiconductor device
US6423643B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Sep 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor element having a signal electrode and a ground electrode. A mounting part metallic film has a bottom area on which the semiconductor element is mounted and a stepped area located at a periphery of the bottom area and being higher in horizontal level than the bottom area. A connector part metallic film is spaced from the mounting part metallic film and arranged at a peripheral region thereof. The signal electrode of the semiconductor element is electrically connected to the connector part metallic film and the ground electrode of the semiconductor element is electrically connected to the stepped area of the mounting part metallic film. The semiconductor element is shielded with resin together with mounting/connecting sides of the mounting part metallic film and the connector part metallic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.