Semiconductor device having a tantalum oxide blocking film
US6424012B1 · kind B1 · utility
42Cited by
4References
22Claims
0Family size
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Key dates
| Filing date | Apr 18, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Apr 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.