Semiconductor device and method for manufacturing the same
US6424036B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pad metal film used to fit a conductor for external connection composed of a bump-like or wire-like conductor can be formed by reduced numbers of processes. A semiconductor device is so configured that a trench for interconnect with its diameter of about 50 &mgr;m and its depth of about 2 &mgr;m is formed on a protective insulating film, formed on a semiconductor substrate, with a thickness of 3 to 4 &mgr;m, and in the trench for interconnect is imbedded an uppermost-layered copper wiring through a first barrier metal film composed of a titanium nitride with a thickness of about 50 nm. Furthermore, approximately in the center region of the upper-layered copper wiring is imbedded a copper pad film through a second barrier metal film with a thickness of about 70 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.