Alignment mark for electron beam lithography
US6424052B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An alignment mark for use in electron beam lithography for manufacturing a fine semiconductor structure by repeating a regrowth of a compound semiconductor layer and a fine process including electron beam exposure. The alignment mark includes a lower protection layer made of tungsten formed on a compound semiconductor substrate, a mark main body made of gold, chromium or platinum shaped into a desired pattern having a sharp edge profile which generates a detection signal of a mark position having a large gain, and an upper protection layer covering the mark main body and made of silicon oxide which does not react significantly with substances constituting a compound semiconductor layer. The mark main body has a thickness which is not less than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.