Voltage detecting circuit for semiconductor memory device
US6424578B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage detecting circuit includes a first voltage generator that provides a reference voltage, a second voltage generator that provides a comparison voltage in response to a boosted voltage, and a differential amplifier that provides an amplified difference signal to generate a voltage level detection signal in response to a voltage difference between the reference voltage and the comparison voltage. A bypass circuit is coupled to the amplified signal to detect a target VPP level suitable for a test mode by providing a current path in response to the comparison voltage when the comparison voltage reaches a predetermined level. The voltage detecting circuit thereby allows a precise and stable detecting operation to be performed regardless of the operation mode or process or temperature variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.