Semiconductor laser device having an SBR structure
US6424668B1 · kind B1 · utility
5Cited by
4References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate formed of GaAs. A lower electrode is formed on an underside of this substrate. Formed, on a top surface of the substrate, are a lower cladding layer, an active layer and a first upper cladding layer. A ridge including a second upper cladding layer is formed on the first upper cladding layer. A current restricting layer is formed in a manner of clamping this ridge from both sides. A contact layer is formed on the ridge and current restricting layer. A third upper cladding layer is formed between the ridge and current restricting layer and the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.