Method of inspecting photo masks
US6426168B1 · kind B1 · utility
7Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of inspecting photo masks by patterning at least one image in a first region of a substrate using a first photo mask, patterning at least one second image in a second region of the substrate using a second photo mask, wherein the first and second regions are substantially near one another. Comparing the first and second images to determine if the first photo mask forms a pattern substantially similar to the image formed by the second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.