Method for fabricating semiconductor device by using etching polymer
US6426300B2 · kind B2 · utility
12Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2001 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for fabricating a semiconductor device using an etch-resistant polymer. The method includes a step for the in-situ generation of a polymer layer on the exposed surfaces of a photoresist film pattern, a pad oxide film, and a hard mask layer. This polymer acts as a protective film and prevents photoresist erosion during trench etching processes and improves the etch selectivity. As a result, trench structures can be formed more easily and with improved dimensional control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.