Dual non-parallel electronic field electro-optic effect device
US6426514B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0158
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is for an improved modulator and detection device that use reversed biased diodes containing not intentionally doped (NID) optically active regions sandwiched between conductive layers of p-doped and n-doped semiconductor layers. A photo-current is generated using the optical non-linearity of multiple quantum structures inside the active region and that can be used in an external circuit to provide feedback to the device itself. This is commonly referred to as the self electro-optic effect device (SEED) where the applied electric field modulates the absorption (excitonic in nature due to the reduced dimensionality of the quantum well) of the active layer by the use of the quantum confined Stark effect. The present invention seeks to improve on known devices by separating the photo-current from the perpendicular biased electric field so as to produce a four electrical port device, by simultaneously applying non-parallel fields. In an optimum configuration one applies both perpendicular and parallel electric fields (that may be intrinsically or externally applied) to a material containing two-dimensional quantum wells (or superlattice) one dimensional quantum wi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.