Semiconductor device
US6426520B1 · kind B1 · utility
8Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (23, 24) of a first semiconductor type, and the voltage termination structure comprises first and second layers (21 and 22) formed within the substrate region. The first and second layers (21 and 22) define regions each of a second semiconductor type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.