Diode-assisted gate turn-off thyristor
US6426666B1 · kind B1 · utility
30Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Nov 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/732
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate-controlled switch includes a gate turn-off thyristor in series with a diode. By using the diode in series with the GTO, the switch significantly increases the turn-off voltage that can be used for the current commutation. The unity turn-off gain and the snubberless turn-off capability are demonstrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.