High performance integrated radio frequency circuit devices

US6426673B2 · kind B2 · utility

Assignee

• Programmable Silicon Solutions · US

Inventor

• Ting-Wah Wong · Cupertino, US

Key dates

• Filing date: Feb 20, 2001
• Grant date: Jul 30, 2002
• Expiry date: Feb 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859

Abstract

A radio frequency device may be formed which has high power output and high transistor switching speeds. This may be done by providing thicker gate oxides and a higher supply potential to transistors utilized to form the power amplifier and using thinner gate oxides conventionally associated with high switching speed and advanced process technologies for other applications on the same integrated circuit. Thus, high switching speeds can be achieved-with some transistors which utilize a lower supply voltage and high power output can be achieved from other transistors which are coupled to a higher supply voltage. The different types of transistors may be made in the same integrated circuit fabrication process on the same integrated circuit.