Semiconductor laser device
US6426967B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate formed of GaAs. A lower electrode is formed on an underside of this substrate. The substrate has, on its top surface, a lower cladding layer, an active layer, a first upper cladding layer, an etch stop layer, a current restricting layer, a second contact layer and an upper electrode formed in this order. A second upper cladding layer is formed widthwise centrally of the current restricting layer. A first contact layer and an insulation film are formed on the second upper cladding layer. This insulation film blocks a current from flowing from the upper electrode to an end of an optical waveguide. Accordingly, a current non-injection region is provided at an end of the active layer or optical waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.