Method of etching using hydrofluorocarbon compounds
US6428716B1 · kind B1 · utility
6Cited by
21References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZ wherein:x=3, 4 or 5;2x≧z≧y;andy+z=2x+2;and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.