Electron transport material and light emitting diode that contains the electron transport material
US6428912B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An improved multilayer light emitting device includes novel compounds for use as the electron transporting layer. In particular, the novel compounds are novel aluminum cheltates (e.g. tris(9-oxidophenalenone) aluminum [Al(9-opo)3] and tris(6-oxidobenzanthrone) aluminum [Al(6-obao)3]. These compounds are electron acceptors having improved thermal stability while in most cases and in most applications maintaining comparable efficiencies. When negatively biased, electrons are infected into the electron transporting layer. The concurrent positive bias on the anode in relation to the cathode causes holes to be injected from the cathode into the hole transporting layer. Electroluminescence is produced and confined generally near the interface between these electron and hole transporting layers an a result of the recombination of the electron and hole pairs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.