Process for manufacturing mirror devices using semiconductor technology
US6429033B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0841
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a mirror array from a silicon on insulator substrate structure. The method includes providing a silicon-on-insulator (SOI) substrate structure, which may have a material thickness of greater than 10 microns overlying an insulating layer. The SOI material thickness is of a single crystal silicon bearing material. The method also patterns the material thickness using a deep reactive ion etching process to pattern a mirror device structure by forming a trench region that extends from a surface of the material thickness to the insulator structure; and patterns the thickness of material to form a recessed region coupled to the trench region to define a torsion bar structure. The recessed region extends from the surface of the material thickness and is less than about 80% of the mirror device thickness. The method forms an opening on a back side of the SOI substrate structure to the insulator structure. The method removes the insulator material to release the mirror device structure and the torsion bar structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.