Thin-film transistor elements and methods of making same
US6429456B1 · kind B1 · utility
9Cited by
7References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1998 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Apr 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
This invention provides an inverted staggered type thin-film transistor element wherein the n-doped amorphous silicon film (14) present in the region where the amorphous silicon film (13) does not overlap with the source-drain electrodes (15) is modified into an insulating film (17) by exposure to a plasma containing ions or radicals of oxygen and/or nitrogen, so that the undesired n-doped amorphous silicon film above a channel region need not be removed and the amorphous silicon film can be made thinner. Moreover, the aperture ratio of a liquid crystal display can be enhanced by utilizing such elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.