Field-effect transistor

US6429457B1 · kind B1 · utility

Assignee

• Thin Film Electronics ASA · NO

Inventors

• Rolf M. Berggren · Vreta kloster, SE
• Bengt Göran Gustafsson · Bredaryd, SE
• Johan Roger Axel Karlsson · Linköping, SE

Key dates

• Filing date: Sep 15, 1999
• Grant date: Aug 6, 2002
• Expiry date: Sep 15, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/83

Abstract

A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes (2, 5) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode (4) the gate electrode of the field-effect transistor. Over the layers in the vertical step (6) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode (8) directly or indirectly and forming a vertically oriented transistor channel (9) of the p or n type between the first (2) and the second (5) electrode. In a method for fabrication of a field effect transistor a vertical step (6) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material (8) is deposited over the first electrode (2) and th…