Split gate type flash memory
US6429472B2 · kind B2 · utility
5Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A split gate type flash memory having an active region that improves an endurance characteristic along with program/erase efficiency, wherein the split gate type flash memory provides for improvement in the endurance characteristic and program/erase efficiency by making the width of an active region in a portion in which a source is overlapped by a floating gate as large as possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.