Method and apparatus for a monolithic integrated MESFET and p-i-n optical receiver
US6429499B1 · kind B1 · utility
6Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | May 18, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | May 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p region in a p-well of the substrate and forming at least one n region in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p region in an absorption region of the substrate when forming the at least one p region in the p well of the FET and forming at least one n region in the absorption region of the substrate when forming the at least one n region in the p-well of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.