Multi-chambered trench isolated guard ring region for providing RF isolation
US6429502B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Aug 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel trench isolated guard ring region for providing RF isolation is disclosed. The semiconductor integrated circuit (IC) device of the present invention comprises a substrate, an insulating layer formed on the substrate, a buried layer formed on the insulating layer, and an epitaxial layer of a first conductivity type formed on the buried layer. A first isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer. A second isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench. A plurality of isolation chambers is formed within the first and second isolation trenches. A collector is implanted into the epitaxial layer in the guard ring region. A contact is made to the collector, and a conductor connects the contact to a ground node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.