Patent · US Expired

Method of making semiconductor supercapacitor system and articles produced therefrom

US6432472B1 · kind B1 · utility

58Cited by
4References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 7, 2000
Grant dateAug 13, 2002
Priority date
Expiry dateMar 7, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E60/13
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.