Semiconductor ceramic and semiconductor ceramic device
US6432558B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Jan 14, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12729
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor ceramic device comprises a body composed of a semiconductor ceramic having a positive resistance-temperature coefficient primarily composed of barium titanate and electrodes provided on the body, in which the resistance-temperature coefficient is 9%/° C. or more, resistivity is 3.5 ∩·cm or less, and withstand voltage is 50 V/mm or more. As the semiconductor ceramic forming the body provided in a thermistor having positive resistance-temperature characteristics, a semiconductor ceramic having a positive resistance-temperature coefficient is used, in which the semiconductor ceramic has an average particle diameter of about 7 to 12 &mgr;m and comprises barium titanate as a major component and sodium in an amount of about 70 ppm or less on a weight basis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.