Plasma processing method and apparatus
US6432730B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2001 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Feb 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method includes evacuating a vacuum chamber while supplying a gas into the vacuum chamber, thereby controlling an interior of the vacuum chamber to a pressure, and supplying a high frequency power of a frequency of 50 MHz-3 GHz to an antenna which is set opposite to a substrate placed to a substrate electrode in the vacuum chamber and which has a structure with a dielectric member held between a wall face of the vacuum chamber opposite to the substrate and a metallic plate, thereby generating plasma inside the vacuum chamber and processing the substrate, wherein the high frequency power is supplied to satisfy a relation 3r<c/(f·∈½)<9r when c is a light velocity (m/sec), f is a frequency (Hz) of the high frequency power, ∈ is a relative permittivity of the dielectric member and, r is a half (m) of a longer line of a shape of the dielectric member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.