Method for increasing the effective well doping in a MOSFET as the gate length decreases

US6432777B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Werner Rausch · Hopewell Junction, US
• Ralph W. Young · Poughkeepsie, US

Key dates

• Filing date: Jun 6, 2001
• Grant date: Aug 13, 2002
• Expiry date: Jun 6, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0167

Abstract

A method of manufacturing a metal oxide semiconductor field effect transistor (MOSFET). The method forms an insulator layer over a substrate and a doped layer over the insulator layer. Further, the invention patterns a conductor layer over the doped layer. The conductor layer includes gate conductors. The invention implants a second impurity through the conductor layer and into the doped layer. The second impurity is of an opposite type than that of the first type of impurity. Also, the second impurity decreases the effective concentration of the first impurity in the doped layer. The amount of the second type of impurity that penetrates through the conductor layer into the doped layer changes depending upon the length of the gate conductors within the conductor layer.