Surface modifying layers for organic thin film transistors

US6433359B1 · kind B1 · utility

Assignee

• 3M INNOVATIVE PROPERTIES COMPANY · US

Inventors

• Tommie W. Kelley · Coon Rapids, US
• Dawn V. Muyres · Windom, US
• Mark J. Pellerite · Woodbury, US
• Timothy D. Dunbar · Woodbury, US
• Larry D. Boardman · Woodbury, US
• Terrance P. Smith · Woodbury, US

Key dates

• Filing date: Sep 6, 2001
• Grant date: Aug 13, 2002
• Expiry date: Sep 6, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/615
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X—Y—Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from —PO3H2, —OPO3H2, benzotriazolyl (—C6H4N3), carbonyloxybenzotriazole (—OC(═O)C6H4N3), oxybenzotriazole (—O—C6H4N3), aminobenzotriazole (—NH—C6H4N3), —CONHOH, —COOH, —OH, —SH, —COSH, —COSeH, —C5H4N, —SeH, —SO3H, —NC, —SiCl(CH3)2, —SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n=1 when Z is —SiCl(CH3)2 or —SiCl2CH3.Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.