Infrared detector device of semiconductor material and manufacturing process thereof
US6433399B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Oct 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.