Threshold voltage generation circuit
US6433624B1 · kind B1 · utility
53Cited by
11References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/262
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A threshold voltage generation circuit includes a control transistor, one or more load transistors, and a current mirror. The load transistors are diode-connected transistors that are operated in saturation. The source-to-gate voltage of the load transistors approximates the threshold voltage of the transistors over process and temperature. The operation of the circuit is affected by choosing a bias voltage for the control transistor, the sizes of the control transistor and load transistors, and the ratio of transistor sizes within the current mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.