High frequency power amplifier module and wireless communication system
US6433639B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 22, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Nov 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the, EDGE (for a linear amplifying action).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.