Giant magnetoresistive sensor with pinning layer
US6433972B1 · kind B1 · utility
18Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Sep 1, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), where X is either Cr or Pd. The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.