Electrostatic discharge protection device using semiconductor controlled rectifier
US6433979B1 · kind B1 · utility
21Cited by
2References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 19, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Jan 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A novel electrostatic discharge (ESD) protection device used for mixed voltage application is disclosed. Semiconductor-controlled rectifier (SCR) is utilized as the basic protection device for ESD current bypass. MOS transistors are stacked in a cascode configuration with at least two transistors to reduce the trigger voltage of the SCR for the mixed voltage modification. None of the voltage across any gate dielectric exceeds low supply level. The dielectric and hot carrier reliability of the MOS transistors can thus be ensured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.