Formation of thin film capacitors
US6433993B1 · kind B1 · utility
67Cited by
14References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Mar 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09309
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.