Showerhead apparatus for radical-assisted deposition
US6435428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Feb 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate. The showerhead apparatus for radical-assisted deposition comprises a raw material gas spray mechanism including a first buffer which is divided into upper and lower layers for uniformly distributing a gas introduced from a raw material gas injection tube, wherein a plurality of raw material gas spray holes for spraying the raw material gas distributed within the first buffer at a given flow rate is formed at a lower plate of the spray mechanism; a plasma generating gas spray mechanism including a second buffer for uniformly distributing a plasma generating gas between with the raw material gas spray mechanism, wherein a plurality of plasma generating gas spray holes and through holes for spraying the plasma generating…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.