Lithographic method utilizing a phase-shifting mask
US6436608B1 · kind B1 · utility
3Cited by
0References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 20, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Jan 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a lithographic method utilizing a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. Further disclosed is a method for fabricating a semiconductor device utilizing the phase-shifting mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.